Spatial distribution of radiation-induced interface traps under the gate of an Al/SiO2/Si capacitor
- 1 January 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (1), 80-82
- https://doi.org/10.1063/1.95805
Abstract
The radiation‐induced interface trap density in an Al/SiO2/Si capacitor has been found to exhibit a systematic lateral variation under the gate area as one probes from the edge toward the center of the device. This spatial variation correlates well with the lateral distribution of the gate Al induced interfacial stresses, and the results provide further support to one earlier conclusion that the metal‐oxide‐Si device radiation sensitivity depends strongly on its interfacial stress distribution.Keywords
This publication has 9 references indexed in Scilit:
- Dependence of radiation-induced interface traps on gate Al thickness in metal/SiO2/Si structuresJournal of Applied Physics, 1984
- Effect of stress relaxation on the generation of radiation-induced interface traps in post-metal-annealed Al-SiO2-Si devicesApplied Physics Letters, 1984
- Gate-width dependence of radiation-induced interface traps in metal/SiO2/Si devicesApplied Physics Letters, 1983
- Radiation-Induced Defects in SiO2 as Determined with XPSIEEE Transactions on Nuclear Science, 1982
- Comparison of interface-state generation by 25-keV electron beam irradiation in p-type and n-type MOS capacitorsApplied Physics Letters, 1975
- Electrical properties of metal-SiO2-silicon structures under mechanical stressJournal of Applied Physics, 1973
- Stress concentration in silicon-insulator interfacesSolid-State Electronics, 1970
- Enhanced X-Ray Diffraction from Substrate Crystals Containing Discontinuous Surface FilmsJournal of Applied Physics, 1967
- X-Ray Extinction Contrast Topography of Silicon Strained by Thin Surface FilmsJournal of Applied Physics, 1965