Epitaxial Vapor Growth of Gallium Antimonide

Abstract

Epitaxial vapor growth of gallium antimonide in the closed tube process is studied using polycrystal gallium antimonide and hydrogen chloride as the source crystal and the transport agent respectively. The transport rate is maximum when the hydrogen chloride concentration initially charged in the reactor is about 10^-7 mole per unit volume. The surface morphology of the grown layer is strongly dependent on the pretreatment of substrate surface: The grown layer is mirror-smooth when the substrate surface is vapor-etched in situ for about 30 minutes preceding to the deposition. The electrical properties of the grown layers are studied by using the Pauw's method. The hole concentration in the grown layer obtained in the routine experiment is comparable to or smaller than the lowest value ever reported (3∼4×10¹⁶ holes/cm³), and the hole mobility ranges from 700 to 800 cm²/V·sec without any indication of compensation.