An investigation into the apparent purity limit in GaSb
- 1 May 1964
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 25 (5), 451-460
- https://doi.org/10.1016/0022-3697(64)90117-9
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Role of Oxygen in Reducing Silicon Contamination of GaAs during Crystal GrowthJournal of Applied Physics, 1963
- Vitreous carbon as a crucible material for semiconductorsSolid-State Electronics, 1963
- Distribution Coefficients of Impurities in Gallium AntimonideJournal of Applied Physics, 1961
- Electrical Properties of-Type GaSbPhysical Review B, 1961
- A Reliable Method for the Production of High Purity Indium Antimonide†Journal of Electronics and Control, 1959
- Optical Properties of Gallium Antimonide*Journal of the Optical Society of America, 1959
- Cryostat for measuring the electrical properties of high resistance semiconductors at low temperaturesJournal of Scientific Instruments, 1959
- On the relation between non-stoichiometry and the formation of donor and acceptor centres in compoundsJournal of Physics and Chemistry of Solids, 1958
- Electrical Properties of Gallium AntimonidePhysical Review B, 1955
- Some Properties of-Type Gallium Antimonide between 15°K and 925°KPhysical Review B, 1954