Ion-pairing between lithium and the residual acceptors in GaSb
- 1 January 1965
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 26 (1), 41-48
- https://doi.org/10.1016/0022-3697(65)90070-3
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- An investigation into the apparent purity limit in GaSbJournal of Physics and Chemistry of Solids, 1964
- Acceptors in Donor-Doped GaAs Resulting from Li DiffusionJournal of Applied Physics, 1963
- Diffusion, Solubility, and Electrical Behavior of Li in GaAs Single CrystalsJournal of Applied Physics, 1962
- Electrical Properties of Li in GaAsJournal of Applied Physics, 1962
- Properties of High-Resistivity Gallium Arsenide Compensated with Diffused CopperJournal of Applied Physics, 1961
- Distribution Coefficients of Impurities in Gallium AntimonideJournal of Applied Physics, 1961
- Extension of infrared spectra of III–V compounds by lithium diffusionJournal of Physics and Chemistry of Solids, 1958
- Formation of Ion Pairs and Triplets between Lithium and Zinc in GermaniumPhysical Review B, 1957
- Chemical Interactions Among Defects in Germanium and SiliconBell System Technical Journal, 1956
- Some Properties of-Type Gallium Antimonide between 15°K and 925°KPhysical Review B, 1954