Embedded-stripe GaAs-GaAlAs double-heterostructure lasers with polycrystalline GaAsP layers - I: Lasers with cleaved mirrors
- 1 August 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 13 (8), 623-627
- https://doi.org/10.1109/jqe.1977.1069408
Abstract
We report a new type of embedded stripe laser in which low-order mode CW oscillation is successfully attained at room temperature. In order to achieve lateral current confinement, a high-resistivity polycrystalline GaAsP layer is formed around the mesa stripe by selective vapor-phase growth technology. It turns out that a stable single-mode operation is attained at an injected current up to several times the threshold value.Keywords
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