Single-transverse-mode injection lasers with embedded stripe layer grown by molecular beam epitaxy
- 1 August 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (3), 164-166
- https://doi.org/10.1063/1.89009
Abstract
Lateral current confinement was achieved in injection lasers with embedded stripes selectively grown by molecular beam epitaxy. A single transverse mode was obtained at currents 4–6 times threshold with a 5‐μm‐wide stripe.Keywords
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