Characteristics of polycrystalline-Si thin film transistors fabricated by excimer laser annealing method
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (10), 1876-1879
- https://doi.org/10.1109/16.324604
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Demonstration of the potential of accumulation-mode MOS transistors on SOI substrates for high-temperature operation (150-300 degrees C)IEEE Electron Device Letters, 1993
- KrF excimer laser annealed TFT with very high field-effect mobility of 329 cm/sup 2//V-sIEEE Electron Device Letters, 1992
- Temperature dependence of threshold voltage in thin-film SOI MOSFETsIEEE Electron Device Letters, 1990
- Activation energy of source-drain current in hydrogenated and unhydrogenated polysilicon thin-film transistorsIEEE Transactions on Electron Devices, 1990
- High-performance TFTs fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon filmIEEE Transactions on Electron Devices, 1989
- XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFT'sJapanese Journal of Applied Physics, 1989
- Crystallization of LPCVD Silicon Films by Low Temperature AnnealingJournal of the Electrochemical Society, 1989
- Subthreshold model of a polycrystalline silicon thin-film field-effect transistorApplied Physics Letters, 1987
- A self-consistent analysis of temperature-dependent field-effect measurements in hydrogenated amorphous silicon thin-film transistorsJournal of Applied Physics, 1986
- XeCl Excimer laser annealing used in the fabrication of poly-Si TFT'sIEEE Electron Device Letters, 1986