Demonstration of the potential of accumulation-mode MOS transistors on SOI substrates for high-temperature operation (150-300 degrees C)
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (1), 10-12
- https://doi.org/10.1109/55.215084
Abstract
Measurements of accumulation-mode (AM) MOS SOI transistors in the 150-300 degrees C temperature range are reported and discussed. The increases of the threshold voltage shift and off leakage current with temperature of these SOI p-MOSFETs are observed to be much smaller than their bulk equivalents. Simple models are presented to support the experimental data.Keywords
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