Far-Infrared Absorption Spectrum of Be-Related Bound Excitons in Silicon
- 2 January 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 52 (1), 81-84
- https://doi.org/10.1103/physrevlett.52.81
Abstract
The first measurement of the far-infrared absorption spectrum of a bound exciton is reported. This spectrum reveals the odd-parity excited states of the exciton, which cannot be observed by other means. The excited-state spectrum is found to be in excellent agreement with those of acceptors in Si, verifying earlier predictions of the level structure for isoelectronic bound excitons.Keywords
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