A simple approach for accurately modeling the threshold voltage of short-channel mosts
- 31 August 1977
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (8), 675-680
- https://doi.org/10.1016/0038-1101(77)90043-0
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- A simple theory to predict the threshold voltage of short-channel IGFET'sSolid-State Electronics, 1974
- An analysis of the threshold voltage for short-channel IGFET'sSolid-State Electronics, 1973
- Investigations on the effect of drift-field-dependent mobility on MOST characteristics—Part I: QBconstantIEEE Transactions on Electron Devices, 1972
- An accurate large-signal MOS transistor model for use in computer-aided designIEEE Transactions on Electron Devices, 1972
- The distribution of mobile carriers in the pinch-off region of an insulated-gate field-effect transistor and its influence on device breakdownSolid-State Electronics, 1971
- Drift velocity saturation in MOS transistorsIEEE Transactions on Electron Devices, 1970
- Modelling of short-channel m.o.s. transistorsElectronics Letters, 1970
- Computer-aided design and characterization of digital MOS integrated circuitsIEEE Journal of Solid-State Circuits, 1969
- Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistorsSolid-State Electronics, 1966