Thermal Stability of Fluorinated SiO2 Films: Effects of Hydration and Film-Substrate Interaction
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Influences of deposition temperature on thermal stability and moisture resistance of chemical vapor deposited fluorinated silicon oxide by using indirect fluorinating precursorApplied Physics Letters, 1996
- Dielectric Constant and Stability of Fluorine‐Doped Plasma Enhanced Chemical Vapor Deposited SiO2 Thin FilmsJournal of the Electrochemical Society, 1996
- Instability of Si—F bonds in fluorinated silicon oxide (SiOF) films formed by various techniquesThin Solid Films, 1996
- Characterization of Stable Fluorine-Doped Silicon Oxide Film Prepared by Biased Helicon Plasma Chemical Vapor DepositionJapanese Journal of Applied Physics, 1996
- Formation of SiOF Films by Plasma-Enhanced Chemical Vapor Deposition Using (C2H5O)3SiFJapanese Journal of Applied Physics, 1996
- Elimination of Al Line and Via Resistance Degradation under HTS Test in Application of F-Doped Oxide as Intermetal DielectricJapanese Journal of Applied Physics, 1996
- CVD of fluorosilicate glass for ULSI applicationsThin Solid Films, 1995
- Study of the material properties and suitability of plasma-deposited fluorine-doped silicon dioxides for low dielectric constant interlevel dielectricsThin Solid Films, 1995
- Fluorinated interlayer dielectric films in ULSI multilevel interconnectionsJournal of Non-Crystalline Solids, 1995
- Thermal Desorption and Infrared Studies of Plasma-Enhanced Chemical Vapor Deposited SiO Films with TetraethylorthosilicateJapanese Journal of Applied Physics, 1993