X-ray rocking curve study of Si-implanted GaAs, Si, and Ge
- 1 April 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (7), 604-606
- https://doi.org/10.1063/1.93195
Abstract
Crystalline properties of Si-implanted 〈100〉 GaAs, Si, and Ge have been studied by Bragg case double-crystal x-ray diffraction. Sharp qualitative and quantitative differences were found between the damage in GaAs on one hand and Si and Ge on the other. In Si and Ge the number of defects and the strain increase linearly with dose up to the amorphous threshold. In GaAs the increase in these quantities is neither linear nor monotonic with dose. At a moderate damage level the GaAs crystal undergoes a transition from elastic to plastic behavior. This transition is accompanied by the creation of extended defects, which are not detected in Si or Ge.This publication has 15 references indexed in Scilit:
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