Electron spin resonance study of high field stressing in metal-oxide-silicon device oxides
- 10 November 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (19), 1296-1298
- https://doi.org/10.1063/1.97391
Abstract
We find that two paramagnetic ‘‘trivalent silicon’’ centers appear to be responsible for damage resulting from Fowler–Nordheim injection of electrons into thermal oxides on silicon.Keywords
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