Monolithic NMOS digital integrated circuits in 6H-SiC
- 1 November 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (11), 455-457
- https://doi.org/10.1109/55.334665
Abstract
We report the first digital monolithic integrated circuits in the wide bandgap semiconductor silicon carbide (SiC). These logic gates are implemented in enhancement-mode NMOS using ion implanted MOSFET's with non-self-aligned metal gates. We have fabricated and characterized inverters, NAND and NOR gates, XNOR gates, D-latches, RS flip-flops, binary counters, and half adders. All circuits operate properly from room temperature to over 300/spl deg/C.Keywords
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