GaAs/GaAlAs surface emitting IR LED with Bragg reflector grown by MOCVD
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4), 832-835
- https://doi.org/10.1016/0022-0248(91)90565-m
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- GaAs/Ga0.65Al0.35As DBR surface emitting lasers grown by OMVPEJournal of Crystal Growth, 1988
- GaInAsP/InP surface emitting laser (λ = 1.4 μm, 77 K) with heteromultilayer Bragg reflectorElectronics Letters, 1985