GaAs/Ga0.65Al0.35As DBR surface emitting lasers grown by OMVPE
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4), 809-813
- https://doi.org/10.1016/0022-0248(88)90623-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Room temperature pulsed oscillation of GaAlAs/GaAs surface emitting junction laserIEEE Journal of Quantum Electronics, 1985
- GaInAsP/InP surface emitting laser (λ = 1.4 μm, 77 K) with heteromultilayer Bragg reflectorElectronics Letters, 1985
- Two-dimensional array of GaInAsP/InP surface-emitting lasersElectronics Letters, 1985
- GaInAsP/InP surface emitting injection lasers with short cavity lengthIEEE Journal of Quantum Electronics, 1983
- Lasing characteristics of improved GaInAsP/InP surface emitting injection lasersElectronics Letters, 1983