Ion beam deposition of β-SiC layers onto α-SiC substrates
- 1 January 1989
- Vol. 39 (11-12), 1065-1068
- https://doi.org/10.1016/0042-207x(89)91094-4
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substratesJournal of Applied Physics, 1988
- Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in β-SiC thin filmsJournal of Applied Physics, 1988
- An examination of double positioning boundaries and interface misfit in beta-SiC films on alpha-SiC substratesJournal of Applied Physics, 1988
- Electrical properties of ion-implanted p-n junction diodes in β-SiCJournal of Applied Physics, 1988
- MBE growth of 3C·SiC/6·SiC and the electric properties of its p-n junctionJournal of Crystal Growth, 1987
- Antiphase boundaries in epitaxially grown β-SiCApplied Physics Letters, 1987
- Transmission electron microscopy of process-induced defects in β-SiC thin filmsJournal of Materials Research, 1986
- Epitaxial growth of β-SiC thin films on 6H α-SiC substrates via chemical vapor depositionApplied Physics Letters, 1986
- Epitaxial Growth and Characterization of β ‐ SiC Thin FilmsJournal of the Electrochemical Society, 1985
- Epitaxial deposition of silicon carbide from silicon tetrachloride and hexaneThin Solid Films, 1976