Epitaxial growth of β-SiC thin films on 6H α-SiC substrates via chemical vapor deposition
- 27 October 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (17), 1074-1076
- https://doi.org/10.1063/1.97479
Abstract
Epitaxial films of cubic β‐SiC(111) have been grown via chemical vapor deposition at 1683 K on (0001) substrates of hexagonal 6H α‐SiC. Optical microscopy of the surface indicated that a decrease in the ratio of the sum of the C and Si source gases to the H2 carrier gas changed the crystallization behavior from polycrystalline to monocrystalline. Cross‐sectional transmission electron microscopy showed almost no line or planar defects at the substrate/film interface and very few defects within the bulk of the film.Keywords
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