Channeling scanning transmission ion microscopy
- 26 March 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (13), 1236-1238
- https://doi.org/10.1063/1.102524
Abstract
Scanning transmission ion microscopy (STIM) has been used, in conjunction with channeling, to explore transmission channeling in 50-μm-thick epitaxially grown n-type silicon with 3.9 MeV H+ beam currents of 0.1 fA focused to spot sizes of less than 200 nm. The technique is extremely efficient, causes negligible damage, and is capable of very high resolution. High-resolution images of crystal damage were obtained with this first demonstration of channeling contrast in STIM.Keywords
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