Temperature-dependent internal friction in silicon nanoelectromechanical systems
- 9 October 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (15), 2397-2399
- https://doi.org/10.1063/1.1316071
Abstract
We report the temperature-dependent mechanical properties of nanofabricated silicon resonators operating in the megahertz range. Reduction of temperature leads to an increase of the resonant frequencies of up to 6.5%. Quality factors as high as 1000 and 2500 are observed at room temperature in metallized and nonmetallized devices, respectively. Although device metallization increases the overall level of dissipation, internal friction peaks are observed in all devices in the range.
Keywords
This publication has 10 references indexed in Scilit:
- Quality factors in micron- and submicron-thick cantileversJournal of Microelectromechanical Systems, 2000
- Nanofabrication and electrostatic operation of single-crystal silicon paddle oscillatorsJournal of Applied Physics, 1999
- Measurement of mechanical resonance and losses in nanometer scale silicon wiresApplied Physics Letters, 1999
- Low-temperature internal friction in metal films and in plastically deformed bulk aluminumPhysical Review B, 1999
- Measurement of nanomechanical resonant structures in single-crystal siliconJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Low-energy excitations in amorphous films of silicon and germaniumPhysical Review B, 1998
- A nanometre-scale mechanical electrometerNature, 1998
- Attonewton force detection using ultrathin silicon cantileversApplied Physics Letters, 1997
- Internal stress and internal friction in thin-layer microelectronic materialsJournal of Applied Physics, 1990
- Stress Relaxation across Grain Boundaries in MetalsPhysical Review B, 1947