Investigation of Ni/4H-SiC diodes as radiation detectors with low doped n-type 4H-SiC epilayers
- 1 July 2003
- journal article
- Published by Elsevier BV in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 510 (3), 273-280
- https://doi.org/10.1016/s0168-9002(03)01868-0
Abstract
No abstract availableKeywords
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