Electroreflectance and ellipsometry of silicon from 3 to 6 eV

Abstract
Using a five-band model, we calculate the effect of the k-linear intravalence band coupling term on dielectric function, third derivative, and low-field electroreflectance (ER) line shapes for Si. The k-linear term, which was recently shown by Cardona strongly to affect transverse-interband reduced-mass values on the 111 symmetry axes, acts to increase the oscillator strength of the upper valence (v)—lower conduction (c) band transitions at the expense of that of the lower spin-orbit split valence bands and c. Using reasonable values of parameters, we show that the E1+Δ1 transition in ER is weakened to the point where it appears only as a subsidiary oscillation, qualitatively in agreement with experiment. Other experimental evidence for the k-linear term includes the absence of a low-field limit for the E1 structure, which is believed to arise from the strong nonparabolicity of the valence bands near the 111 axes. All E1 data, including in addition ER polarization anisotropies and a comparison between ER and numerically differentiated third-derivative spectra, are consistent with a three-dimensional M1 critical point (or point set) at or near L and a three-dimensional M0 critical point at Γ. A third, non-Λ critical-point structure is observed slightly above the M1 structure, too close to be resolved. Both theory and experiment yield no evidence for the anomalously small transverse reduced mass reported by Grover and Handler: the E1, not the E1+Δ1, transition dominates, and as may be expected from the nonparabolicity the "apparent" mass obtained from the ratio of the magnitudes of the ER and third-derivative spectra, both theoretical and experimental, is larger than that calculated without intravalence coupling. Threshold energies are obtained for all observed critical points. For the E2 region, a numerically differentiated second-derivative line shape gives the best fit to the ER spectrum for reasons which are not clear.