Peaked structure in field-effect mobility of silicon MOS transistors at very low temperatures
- 15 November 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (10), 550-552
- https://doi.org/10.1063/1.1654745
Abstract
Field‐effect mobility measurements on silicon n‐ and p‐channel MOS transistors at temperatures of 4.2 K and lower are reported. The measured field‐effect mobility as a function of the gate voltage shows an anomalous peaked structure superimposed on the well‐known over‐all behavior. These peaks are possibly due to statistical fluctuations within the bands of the semiconductor of the density of surface states as a function of the energy.Keywords
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