Asymmetric Melting and Freezing Kinetics in Silicon
- 23 June 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 56 (25), 2712-2715
- https://doi.org/10.1103/physrevlett.56.2712
Abstract
We report measurements of the melting velocity of amorphous Si relative to that of (100) crystalline Si. These measurements permit the first severe experimental test of theories describing highly nonequilibrium freezing and melting. The results indicate that freezing in Si is inherently slower than melting; this asymmetry can be interpreted in terms of an entropy-related reduction in the freezing rate.Keywords
This publication has 12 references indexed in Scilit:
- Sound velocity in amorphous films of germanium and siliconJournal of Vacuum Science & Technology A, 1985
- Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantationJournal of Applied Physics, 1985
- Rapid Melting and Regrowth Velocities in Silicon Heated by Ultraviolet Picosecond Laser PulsesPhysical Review Letters, 1984
- Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser IrradiationPhysical Review Letters, 1984
- Silicon Melt, Regrowth, and Amorphization Velocities During Pulsed Laser IrradiationPhysical Review Letters, 1983
- Melt dynamics of silicon-on-sapphire during pulsed laser annealingApplied Physics Letters, 1983
- Time-resolved conductance and reflectance measurements of silicon during pulsed-laser annealingPhysical Review B, 1983
- THERMODYNAMICS OF EQUILIBRIUM AND NON-EQUILIBRIUM CRYSTALLIZATION OF Ge AND SiLe Journal de Physique Colloques, 1982
- A device for laser beam diffusion and homogenisationJournal of Physics E: Scientific Instruments, 1979
- ON THE RELATION BETWEEN CRYSTALLIZATION RATE AND LIQUID STRUCTUREThe Journal of Physical Chemistry, 1962