Rapid Melting and Regrowth Velocities in Silicon Heated by Ultraviolet Picosecond Laser Pulses
- 9 July 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 53 (2), 182-185
- https://doi.org/10.1103/physrevlett.53.182
Abstract
Direct measurements of the silicon liquid/solid interface velocity have been made during both melt-in and regrowth for crystalline silicon irradiated with a pulsed (15 psec) ultraviolet laser. The liquid films produced were up to 40 nm thick and were fully amorphized upon resolidification. Above threshold, the regrowth velocity was 25 m/sec, independent of laser fluence. The results imply a nonlinear relationship between supercooling and interface velocity.Keywords
This publication has 15 references indexed in Scilit:
- Heat of crystallization and melting point of amorphous siliconApplied Physics Letters, 1983
- Silicon Melt, Regrowth, and Amorphization Velocities During Pulsed Laser IrradiationPhysical Review Letters, 1983
- Amplification of ultrashort pulses in krypton fluoride at 248 nmOptics Letters, 1982
- Picosecond pulse generation in the infrared by stimulated Raman scattering in atomic vapoursOptics Communications, 1980
- Picosecond laser-induced melting and resolidification morphology on SiApplied Physics Letters, 1979
- Calculation of the dynamics of surface melting during laser annealingApplied Physics Letters, 1979
- Order-Disorder Transition in Single-Crystal Silicon Induced by Pulsed uv Laser IrradiationPhysical Review Letters, 1979
- A melting model for pulsing-laser annealing of implanted semiconductorsJournal of Applied Physics, 1979
- Theoretical analysis of thermal and mass transport in ion-implanted laser-annealed siliconApplied Physics Letters, 1978
- Arsenic diffusion in silicon melted by high-power nanosecond laser pulsingApplied Physics Letters, 1978