0.12-μm gate III-V nitride HFET's with high contact resistances
- 1 April 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 18 (4), 141-143
- https://doi.org/10.1109/55.563309
Abstract
HFET's with 0.12-/spl mu/m gate length were fabricated on a III-V nitride wafer. The contact resistance from unannealed Ti/Au ohmic contact was 10 /spl Omega//spl middot/mm. Even with this relatively high contact resistance, f/sub T/ of 46.9 GHz and f/sub max/ of 103 GHz were measured with the Ti/Au contacts, the highest yet achieved on III-V nitride FETs. The improvement in the frequency response was mainly due to the decrease in the gate length (0.12 /spl mu/m). In addition, the effects of high contact resistances at high frequency are discussed.Keywords
This publication has 10 references indexed in Scilit:
- CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHzIEEE Electron Device Letters, 1996
- High transconductance heterostructure field-effect transistors based on AlGaN/GaNApplied Physics Letters, 1996
- 75 Å GaN channel modulation doped field effect transistorsApplied Physics Letters, 1996
- Very low resistance multilayer Ohmic contact to n-GaNApplied Physics Letters, 1996
- Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequencyElectronics Letters, 1996
- Near-ideal platinum-GaN Schottky diodesElectronics Letters, 1996
- Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistorApplied Physics Letters, 1994
- Importance of source and drain resistance to the maximum f/sub T/ of millimeter-wave MODFETsIEEE Electron Device Letters, 1989
- Bias dependence of the MODFET intrinsic model elements values at microwave frequenciesIEEE Transactions on Electron Devices, 1989
- A new method for determining the FET small-signal equivalent circuitIEEE Transactions on Microwave Theory and Techniques, 1988