The effects of scaling and rapid thermal annealing on the 1/∫ noise of polysilicon emitter bipolar transistors
- 31 October 1991
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 15 (1-4), 533-536
- https://doi.org/10.1016/0167-9317(91)90278-l
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Increase of low-frequency-noise-generating defects in today's CMOS and BiCMOS technologiesMaterials Science and Engineering B, 1989
- Effect of RTA on Thin Thermal OxideJournal of the Electrochemical Society, 1988
- Low-frequency noise in self-aligned bipolar transistorsJournal of Applied Physics, 1987
- Self-aligned transistors with polysilicon emitters for bipolar VLSIIEEE Transactions on Electron Devices, 1985
- Comparison of experimental and theoretical results on polysilicon emitter bipolar transistorsIEEE Transactions on Electron Devices, 1984
- Origin of 1/f noise in bipolar transistorsIEEE Transactions on Electron Devices, 1980