NMR Study on Electronic States in Phosphorus Doped Silicon
- 1 October 1978
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 45 (4), 1276-1281
- https://doi.org/10.1143/jpsj.45.1276
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Specific heat study of heavily P doped SiSolid State Communications, 1977
- Nuclear spin-lattice relaxation in heavily doped siliconSolid State Communications, 1976
- NMR Study on Heavily Doped Silicon. IIJournal of the Physics Society Japan, 1975
- Specific-heat studies of heavily doped Si:PPhysical Review B, 1974
- NMR Study on Heavily Doped Silicon. IJournal of the Physics Society Japan, 1974
- Piezoresistance and Magnetic Susceptibility in Heavily Dopedn-Type SiliconJournal of the Physics Society Japan, 1968
- Electric Conduction in Phosphorus Doped Silicon at Low TemperaturesJournal of the Physics Society Japan, 1967
- Absence of Diffusion in Certain Random LatticesPhysical Review B, 1958