Fabrication of high-performance LDDFET's with Oxide sidewall-spacer technology
- 1 April 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 29 (4), 590-596
- https://doi.org/10.1109/t-ed.1982.20748
Abstract
A fabrication process for the Lightly Doped Drain/Source Field-Effect Transistor, LDDFET, that utilizes RIE produced SiO2sidewall spacers is described. The process is compatible with most conventional polysilicon-gated FET processes and needs no additional photomasking steps. Excellent control and reproducibility of the n-region of the LDD device are obtained. Measurements from dynamic clock generators have shown that LDDFET's have as much as 1.9X performance advantage over conventional devices.Keywords
This publication has 8 references indexed in Scilit:
- Elimination of hot electron gate current by the lightly doped drain-source structurePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1981
- A new method to determine MOSFET channel lengthIEEE Electron Device Letters, 1980
- Design and characteristics of the lightly doped drain-source (LDD) insulated gate field-effect transistorIEEE Transactions on Electron Devices, 1980
- New edge-defined vertical-etch approaches for submicrometer MOSFET fabricationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1980
- Plasma resist image stabilization technique (PRIST)Published by Institute of Electrical and Electronics Engineers (IEEE) ,1980
- A New Method to Determine Effective MOSFET Channel LengthJapanese Journal of Applied Physics, 1979
- Hot-carrier instability in IGFET’sApplied Physics Letters, 1975
- Design of ion-implanted MOSFET's with very small physical dimensionsIEEE Journal of Solid-State Circuits, 1974