Temperature dependence of optical gain spectra in GaInAsP/InP double-heterostructure lasers

Abstract

Optical gain spectra of GaInAsP/InP double heterostructures (DHs) have been recorded in the temperature range of 80–300 K. These data are compared with threshold currents of DHs injection lasers fabricated from the same wafers. An identical behavior of maximum optical gain and threshold current is observed, i.e., two T₀ values (100 and 63 K) with a break‐point temperature of T_B ≃260 K are found. Furthermore, characteristic changes of the optical gain spectrum are observed close to the break‐point temperature.