Phosphorus vacancies and adatoms on GaP(110) surfaces studied by scanning tunneling microscopy
- 28 February 1993
- journal article
- Published by Elsevier in Ultramicroscopy
- Vol. 49 (1-4), 344-353
- https://doi.org/10.1016/0304-3991(93)90240-x
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- The electronic structure of the InP(110) surface studied by scanning tunneling microscopy and spectroscopySurface Science, 1992
- A STM study of the InP (110) surfaceUltramicroscopy, 1992
- Calculated atomic structures and electronic properties of GaP, InP, GaAs, and InAs (110) surfacesPhysical Review B, 1991
- A scanning tunneling microscopy study of clean and Cs-covered InSb(110)Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Scanning-tunneling-microscopy study of InSb(110)Physical Review B, 1990
- Observation of point defects and microfaceting on GaAs(110) surfaces by scanning tunneling microscopyVacuum, 1990
- Characterization of localized atomic surface defects by tunneling microscopy and spectroscopyJournal of Vacuum Science & Technology B, 1988
- Local state density and long-range screening of adsorbed oxygen atoms on the GaAs(110) surfacePhysical Review Letters, 1987
- Atom-selective imaging of the GaAs(110) surfacePhysical Review Letters, 1987
- Role of surface antisite defects in the formation of Schottky barriersPhysical Review B, 1982