Observation of point defects and microfaceting on GaAs(110) surfaces by scanning tunneling microscopy
- 1 January 1990
- Vol. 41 (1-3), 591-595
- https://doi.org/10.1016/0042-207x(90)90425-x
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Characterization of localized atomic surface defects by tunneling microscopy and spectroscopyJournal of Vacuum Science & Technology B, 1988
- Voltage-dependent scanning tunneling microscopy imaging of semiconductor surfacesJournal of Vacuum Science & Technology A, 1988
- Tunneling spectroscopy of the GaAs(110) surfaceJournal of Vacuum Science & Technology B, 1987
- Local state density and long-range screening of adsorbed oxygen atoms on the GaAs(110) surfacePhysical Review Letters, 1987
- Atom-selective imaging of the GaAs(110) surfacePhysical Review Letters, 1987
- An easily operable scanning tunneling microscopeSurface Science, 1987
- Surface morphology of GaAs(110) by scanning tunneling microscopyPhysical Review B, 1985
- Role of surface antisite defects in the formation of Schottky barriersPhysical Review B, 1982
- Work function variations of gallium arsenide cleaved single crystalsSurface Science, 1975