Effects of doping and free carriers on the refractive index of direct-gap semiconductors
- 1 May 1974
- journal article
- Published by Springer Nature in Optical and Quantum Electronics
- Vol. 6 (3), 199-216
- https://doi.org/10.1007/bf01423984
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Coulomb Interaction in Semiconductor LasersPhysical Review B, 1972
- A theory for filamentation in semiconductor lasers including the dependence of dielectric constant on injected carrier densityOptical and Quantum Electronics, 1972
- Optical properties of laser-type gallium arsenidePhysics Letters A, 1972
- Electromagnetic theory of heterostructure injection lasersSolid-State Electronics, 1971
- ELECTRIC FIELD EFFECT ON THE REFRACTIVE INDEX IN GaAsApplied Physics Letters, 1965
- Refractive Index of GaAsJournal of Applied Physics, 1964
- Dispersion of the Index of Refraction Near the Absorption Edge of SemiconductorsPhysical Review B, 1964
- Dispersion of the Refractive Index near the Fundamental Absorption Edge in PbSPhysical Review B, 1963
- Reflectivity and Optical Constants of Indium Arsenide, Indium Antimonide, and Gallium ArsenidePhysical Review B, 1961
- Some Electrical and Optical Properties of ZnSeJournal of Applied Physics, 1961