Monolithic integration of a short-length GaInAs photoconductor with a GaAs/GaAlAs optical waveguide on a GaAs semi-insulating substrate
- 19 December 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (25), 2522-2524
- https://doi.org/10.1063/1.100196
Abstract
We report the first fabrication of a Ga0.47In0.53As planar photoconductive detector, associated with a GaAs/GaAlAs rib waveguide grown on a semi‐insulating GaAs substrate, which needs a short‐length absorbing layer to detect the optical signal. Because of the GaAlAs epilayer, a GaInAs length of about 100 μm only is needed to detect 90% of the optical signal, accordingly to results predicted using a four‐layer model with complex refractive indices in each layer.Keywords
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