ELECTRON MICROSCOPE OBSERVATION OF LATTICE DISORDER IN ION-IMPLANTED SILICON
- 15 March 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 18 (6), 257-259
- https://doi.org/10.1063/1.1653654
Abstract
A technique of electron microscope observation of a replica of the chemical etched surface has been used to see the disorder produced around the single‐ion paths in In‐implanted Si. Structures of variable dimensions ranging from about 100 Å up to nearly 600 Å in diameter have been observed, with a density of about 1010 cm−2 in a very thin layer in the surface.Keywords
This publication has 9 references indexed in Scilit:
- ION IMPLANTATION DEPTH DISTRIBUTIONS: ENERGY DEPOSITION INTO ATOMIC PROCESSES AND ION LOCATIONSApplied Physics Letters, 1970
- ION-BOMBARDMENT-ENHANCED ETCHING OF SILICONApplied Physics Letters, 1969
- Observation of ion bombardment damage in siliconPhilosophical Magazine, 1968
- Ion-implantation doping of semiconductorsJournal of Materials Science, 1967
- Evidence for Damage Regions in Si, GaAs, and InSb Semiconductors Bombarded with High-Energy NeutronsJournal of Applied Physics, 1967
- Conversion of crystalline germanium to amorphous germanium by ion bombardmentPhilosophical Magazine, 1965
- Electron Microscope Observation of High-Energy-Neutron-Irradiated GermaniumJournal of Applied Physics, 1965
- Study of Ion-Bombardment Damage on a Ge (111) Surface by Low-Energy Electron DiffractionJournal of Applied Physics, 1965
- Damage to Silicon Produced by Bombardment with Helium IonsJournal of Applied Physics, 1957