Positron annihilation and the charge states of the phosphorus-vacancy pair in silicon
- 1 June 1992
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 4 (22), 5137-5154
- https://doi.org/10.1088/0953-8984/4/22/012
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Ionization levels of As vacancies in as-grown GaAs studied by positron-lifetime spectroscopyPhysical Review B, 1991
- Positron trapping in semiconductorsPhysical Review B, 1990
- Pressure dependence of deep electronic levels in semiconductors: Phosphorus-vacancy pair (or SiEcenter) and divacancy in siliconPhysical Review B, 1989
- Positron trapping at vacancies in electron-irradiated Si at low temperaturesPhysical Review B, 1989
- Positron-annihilation spectroscopy of native vacancies in as-grown GaAsPhysical Review B, 1988
- Breathing-mode lattice relaxation associated with the vacancy and phosphorus-vacancy-pair (E-center) defect in siliconPhysical Review B, 1988
- Defects and Oxygen in Silicon Studied by PositronsPhysica Status Solidi (a), 1987
- Electronic structure and positron states at vacancies in Si and GaAsPhysical Review B, 1986
- Annihilation of Positrons in Electron‐Irradiated Silicon CrystalsPhysica Status Solidi (b), 1978
- On the role of defect charge state in the stability of point defects in siliconSolid State Communications, 1975