High resolution scanning photoluminescence characterization of semi-insulating GaAs using a laser scanning microscope
- 22 December 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (25), 1732-1734
- https://doi.org/10.1063/1.97230
Abstract
Spatially resolved photoluminescence properties of semi-insulating, liquid encapsulated Czochralski-grown GaAs substrates are analyzed with a laser scanning microscope. The improved resolution of the laser scanning microscope results in the observation of single dislocations within the subgrain boundaries of the polyganized dislocation cell network for the first time by photoluminescence. Both the cell structure and the Cottrell cloud are clearly resolved.Keywords
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