Epitaxial growth of Al/GaAlAs films on (100) GaAs by hot vacuum deposition
- 1 February 1979
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (2), 1139-1141
- https://doi.org/10.1063/1.326052
Abstract
Epitaxial growth of (100) GaAlAs and Al was achieved on (100) n‐GaAs substrates using vacuum deposition in an ultrahigh vacuum system. In situ Auger electron analysis, microspot Auger electrospectroscopy, LEED, and reflection electron diffraction was used to characterize the films. Regions of GaAlAs and Al were identified. Electrical measurements indicated the presence of a stable Schottky barrier with a barrier height of 0.76 eV.Keywords
This publication has 9 references indexed in Scilit:
- Comparison of electron sources for high-resolution Auger spectroscopy in an SEMJournal of Applied Physics, 1976
- Low-temperature interdiffusion between aluminum thin films and GaAsJournal of Applied Physics, 1976
- Some Aspects of GaAs MESFET ReliabilityIEEE Transactions on Microwave Theory and Techniques, 1976
- Solid phase epitaxial studies using vacuum deposition on heated silicon substratesApplied Physics Letters, 1976
- Crystallization of Ge and Si in metal films. IIJournal of Applied Physics, 1974
- Molecular beam epitaxy of alternating metal-semiconductor filmsApplied Physics Letters, 1973
- Crystallization of evaporated Si/Ag and Ge/Al filmsJournal of Non-Crystalline Solids, 1973
- Solid-phase epitaxial growth of Si mesas from al metallizationApplied Physics Letters, 1973
- The Growth of a GaAs–GaAlAs SuperlatticeJournal of Vacuum Science and Technology, 1973