A theory on long time delays and internal Q switching in GaAs junction lasers
- 1 August 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 13 (8), 675-681
- https://doi.org/10.1109/jqe.1977.1069413
Abstract
In this paper we present a theory that explains long time delays and internalQswitching in GaAs junction lasers, using only processes known to occur in these lasers: perturbation of refractive index of the active region by injected carriers, joule heating, and gain guiding.Keywords
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