Effect of saturable absorption on the behavior of spontaneous emission in semiconductor lasers
- 15 July 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (2), 94-95
- https://doi.org/10.1063/1.1654821
Abstract
A substantial reduction of the spontaneous emission intensity is observed at the onset of stimulated emission in some injection lasers. It is shown that this effect is caused by the saturation of optically absorbing traps present in the active region. It is suggested that saturable optical absorption is also responsible for previously unexplained similar reduction observed by Nicoll in bulk semiconductor lasers.Keywords
This publication has 16 references indexed in Scilit:
- Decrease in Spontaneous Emission at the Onset of Lasing in SemiconductorsJournal of Applied Physics, 1971
- Characteristics of bistable CW GaAs junction lasers operating above the delay-transition temperatureIEEE Journal of Quantum Electronics, 1970
- Bistable operation of CW junction lasers due to saturable absorbing centersProceedings of the IEEE, 1970
- Time delays and Q switching in junction lasers: I - TheoryIEEE Journal of Quantum Electronics, 1969
- Time delays and Q switching in junction lasers: II - Computer calculations and comparison with experimentsIEEE Journal of Quantum Electronics, 1969
- Optical filling of delay-inducing traps in injection lasersIEEE Journal of Quantum Electronics, 1968
- Temperature behavior of stimulated emission delays in GaAs diodes and a proposed trapping modelIEEE Journal of Quantum Electronics, 1968
- Time-delay and memory effects in GaAs1-xPxinjection laserIEEE Journal of Quantum Electronics, 1968
- Delay of the stimulated emission in GaAs laser diodes near room temperatureSolid-State Electronics, 1967
- Turn-on delay in gallium arsenide lasers operated at room temperatureIEEE Transactions on Electron Devices, 1965