Excimer laser recrystallization of amorphous Si films characterized by grazing X-ray diffraction and optical reflectivity
- 1 December 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 43 (1-4), 142-149
- https://doi.org/10.1016/0169-4332(89)90203-1
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Comparison between microscopical aspects of a-Si films crystallized by pulsed UV excimer laser and calculated temperature profilesApplied Surface Science, 1989
- A thermal description of the melting of c- and a-silicon under pulsed excimer lasersApplied Surface Science, 1989
- Melting threshold of crystalline and amorphized Si irradiated with a pulsed ArF (193 nm) excimer laserApplied Physics A, 1988
- Study of the correlation between hardness and structure of nitrogen-implanted titanium surfacesJournal of Materials Science, 1987