EPR and ENDOR investigations of B acceptors in 3C-, 4H- and 6H-silicon carbide
- 1 January 1998
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 13 (1), 59-70
- https://doi.org/10.1088/0268-1242/13/1/009
Abstract
No abstract availableKeywords
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