Intrinsic localized surface states in GaAs
- 1 March 1972
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 50 (1), 199-208
- https://doi.org/10.1002/pssb.2220500123
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Band Structures of GaAs1−xPx and In1−xGaxPPhysica Status Solidi (b), 1971
- Calculation of the Reflectivity, Modulated Reflectivity, and Band Structure of GaAs, GaP, ZnSe, and ZnSPhysical Review B, 1969
- Electronic surface states in germanium and siliconSolid State Communications, 1966
- Energy-Band Structure of Germanium and Silicon: The k·p MethodPhysical Review B, 1966
- Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresPhysical Review B, 1966
- Electronic Spectra of Crystalline Germanium and SiliconPhysical Review B, 1964
- On the theory of surface statesJournal of Physics and Chemistry of Solids, 1961
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957
- Energy band structure in p-type germanium and siliconJournal of Physics and Chemistry of Solids, 1956
- On the Surface States Associated with a Periodic PotentialPhysical Review B, 1939