Hydrogen elimination during the glow-discharge deposition of a-Si:H alloys
- 1 September 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (5), 407-409
- https://doi.org/10.1063/1.92754
Abstract
A model of the deposition of a‐Si:H films by silane glow discharge is presented. Three steps are involved: SiH2 addition, H2 elimination, and cross linking. The model is based upon SiH2 gas‐phase chemistry and explains the dependence of hydrogen content of a‐Si:H upon substrate temperature.Keywords
This publication has 16 references indexed in Scilit:
- Glow discharge preparation of amorphous hydrogenated silicon from higher silanesApplied Physics Letters, 1980
- The 147-nm photolysis of disilaneJournal of the American Chemical Society, 1980
- Growth morphology and defects in plasma-deposited a-Si:H filmsJournal of Non-Crystalline Solids, 1980
- Retarding crystallization of CVD amorphous silicon by alloyingJournal of Non-Crystalline Solids, 1980
- Structural interpretation of the vibrational spectra of-Si: H alloysPhysical Review B, 1979
- Defects in plasma-deposited a-Si: HJournal of Non-Crystalline Solids, 1979
- The 147-nm photolysis of monosilaneJournal of the American Chemical Society, 1979
- The influence of preparation conditions on the hydrogen content of amorphous glow-discharge siliconApplied Physics Letters, 1979
- Photoluminescence recovery in rehydrogenated amorphous siliconApplied Physics Letters, 1978
- Some aspects of silicon radical chemistryQuarterly Reviews, Chemical Society, 1971