The influence of preparation conditions on the hydrogen content of amorphous glow-discharge silicon
- 15 January 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (2), 173-174
- https://doi.org/10.1063/1.90718
Abstract
The hydrogen content in a‐Si films prepared by the glow‐discharge technique has been studied as a function of preparation conditions. From the γ‐ray yield of the nuclear reaction 1H(15N,αγ) 12C we find hydrogen contents ranging from 4 up to 50 at.%, depending largely on the deposition temperature of the films. Depth profiles show that hydrogen is incorporated uniformly into the films.Keywords
This publication has 7 references indexed in Scilit:
- Hydrogen bonding in silicon-hydrogen alloysPhilosophical Magazine Part B, 1978
- Profiling hydrogen in materials using ion beamsNuclear Instruments and Methods, 1978
- Optical and photoconductive properties of discharge-produced amorphous siliconJournal of Applied Physics, 1977
- The use of nuclear reactions and SIMS for quantitative depth profiling of hydrogen in amorphous siliconApplied Physics Letters, 1977
- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977
- Amorphous silicon solar cellApplied Physics Letters, 1976
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976