Pulse Laser Annealing Effects in Si-Implanted GaAs
- 1 March 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (3R), 326-330
- https://doi.org/10.1143/jjap.23.326
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Laser annealing effects in ion-implanted GaAsJournal of Applied Physics, 1982
- Laser annealing of ohmic contacts on GaAsApplied Physics Letters, 1981
- Pulse annealing deficiencies in GaAsApplied Physics Letters, 1980
- Nonalloyed ohmic contacts to electron-beam-annealed Se-ion-implanted GaAsApplied Physics Letters, 1980
- Laser-irradiation effects on unencapsulated GaAs studied by capacitance spectroscopyApplied Physics Letters, 1979
- Electron mobility and free-carrier absorption in GaAs: Determination of the compensation ratioJournal of Applied Physics, 1979
- Laser annealing of capped and uncapped GaAsElectronics Letters, 1979
- Anodic Oxidation of GaAs as a Technique to Evaluate Electrical Carrier Concentration ProfilesJournal of the Electrochemical Society, 1975