Laser-irradiation effects on unencapsulated GaAs studied by capacitance spectroscopy
- 15 July 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (2), 156-158
- https://doi.org/10.1063/1.91041
Abstract
The effect of Q‐switched ruby‐laser irradiation on unencapsulated unimplanted bulk GaAs has been investigated by means of deep‐level transient spectroscopy (DLTS) and C‐V carrier profiling. It was found that the concentration of a deep‐level center (Ec−0.83 eV) assigned to the A center decreases considerably as a result of laser irradiation, and that no deep levels (electron traps) more than 3×1013/cm3 are induced by the laser irradiation on the uncapped surface at a power level suitable for the recrystallization of an amorphous layer produced by ion implantation. No significant change in the free‐carrier profile at a depth deeper than 1500 Å from the surface was observed after the laser irradiation.Keywords
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