Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy
- 16 August 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (7), 953-955
- https://doi.org/10.1063/1.124252
Abstract
A method of growing semi-insulating GaN epilayers by ammonia molecular beam epitaxy through intentional doping with carbon is reported. Thick GaN layers of high resistivity are an important element in GaN-based heterostructure field-effect transistors. A methaneion source was used as the carbondopant source. The cracking of the methane gas by the ion source was found to be the key to the effective incorporation of carbon. High-quality C-doped GaN layers with resistivities greater than 10 6 Ω cm have been grown with high reproducibility and reliability. AlGaN/GaN heterostructuresgrown on the C-doped semi-insulating GaN-based layers exhibited a high-mobility two-dimensional electron gas at the heterointerface, with room-temperature mobilities typically between 1000 and 1200 cm 2 / V s , and liquid-nitrogen-temperature mobilities up to 5660 cm 2 / V s . The carrier density was almost constant, with less than 3% change over the measuredtemperature range.Keywords
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