Band-to-band Auger effect on the output power saturation in InGaAsP LED's
- 1 April 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 17 (4), 441-444
- https://doi.org/10.1109/jqe.1981.1071143
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Band-to-band Auger recombination effect on InGaAsP laser thresholdIEEE Journal of Quantum Electronics, 1981
- Band-to-band Auger effect in GaSb and InAs lasersJournal of Applied Physics, 1980
- Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphideApplied Physics Letters, 1980
- Single-mode systems and components for longer wavelengths (Invited Paper)IEEE Transactions on Circuits and Systems, 1979
- Temperature Sensitive Threshold Current of InGaAsP–InP Double Heterostructure LasersJapanese Journal of Applied Physics, 1979
- Disorder-enhanced Auger recombination in III-V alloysJournal of Applied Physics, 1978
- Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−y lattice matched to InPApplied Physics Letters, 1978
- InP-GaxIn1−xAsyP1−y double heterostructure for 1.5 μm wavelengthApplied Physics Letters, 1978
- Defect- and phonon-assisted tunneling in LPE In1−xGaxP1−zAsz DH laser diodes (λ∼1 μm)Journal of Applied Physics, 1977
- Valence-Band Parameters in Cubic SemiconductorsPhysical Review B, 1971