Band-to-band Auger effect in GaSb and InAs lasers

Abstract

Band‐to‐band Auger recombination for a semiconductor laser is studied theoretically. Auger recombination calculation method is formulated, which may be applicable to a semiconductor with any injected carrier density. Using the formulated equation, injected carrier density dependence, and the temperature dependence of the Auger lifetime for GaSb and InAs are calculated. The temperature dependence of Auger lifetime and the upper limit of the quantum efficiency under laser threshold condition are also discussed. Calculated result shows that Auger recombination affects cw room‐temperature operation for an InAs laser considerably.